Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SQ2362ES-T1_GE3
Part Number | SQ2362ES-T1_GE3 |
Datasheet | SQ2362ES-T1_GE3 datasheet |
Description | MOSFET N-CH 60V 4.4A TO236 |
Manufacturer | Vishay Siliconix |
Series | Automotive, AEC-Q101, TrenchFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 3W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |