Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STS19N3LLH6
Part Number | STS19N3LLH6 |
Datasheet | STS19N3LLH6 datasheet |
Description | MOSFET N-CH 30V 19A 8SOIC |
Manufacturer | STMicroelectronics |
Series | DeepGATE™, STripFET™ VI |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 15V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1690pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 2.7W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |