Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIAA00DJ-T1-GE3
Part Number | SIAA00DJ-T1-GE3 |
Datasheet | SIAA00DJ-T1-GE3 datasheet |
Description | MOSFET N-CHAN 25V |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® Gen IV |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 20.1A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Vgs (Max) | +16V, -12V |
Input Capacitance (Ciss) (Max) @ Vds | 1090pF @ 12.5V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 19.2W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK® SC-70-6 Single |
Package / Case | PowerPAK® SC-70-6 |