Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIAA00DJ-T1-GE3

Product Introduction

SIAA00DJ-T1-GE3

Part Number
SIAA00DJ-T1-GE3
Manufacturer/Brand
Vishay Siliconix
Description
MOSFET N-CHAN 25V
Category
Transistors - FETs, MOSFETs - Single
RoHs Status
Lead free / RoHS Compliant
Series
TrenchFET® Gen IV
Quantity
31pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number SIAA00DJ-T1-GE3
Datasheet SIAA00DJ-T1-GE3 datasheet
Description MOSFET N-CHAN 25V
Manufacturer Vishay Siliconix
Series TrenchFET® Gen IV
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 20.1A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 1090pF @ 12.5V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6

Latest Products for Transistors - FETs, MOSFETs - Single

SI4888DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 11A 8-SOIC

SI4890BDY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 16A 8-SOIC

SI4892DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 8.8A 8-SOIC

SI4892DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 8.8A 8-SOIC

SI4896DY-T1-E3

Vishay Siliconix

MOSFET N-CH 80V 6.7A 8-SOIC

SI4896DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 6.7A 8SOIC