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| Part Number | IXTQ182N055T | 
| Datasheet | IXTQ182N055T datasheet | 
| Description | MOSFET N-CH 55V 182A TO-3P | 
| Manufacturer | IXYS | 
| Series | TrenchMV™ | 
| Part Status | Obsolete | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 55V | 
| Current - Continuous Drain (Id) @ 25°C | 182A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 25A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | 4850pF @ 25V | 
| FET Feature | - | 
| Power Dissipation (Max) | 360W (Tc) | 
| Operating Temperature | -55°C ~ 175°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | TO-3P | 
| Package / Case | TO-3P-3, SC-65-3 |