Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQA6N80_F109
Product Introduction
FQA6N80_F109
- Part Number
- FQA6N80_F109
- Manufacturer/Brand
- ON Semiconductor
- Description
- MOSFET N-CH 800V 6.3A TO-3P
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- QFET®
- Quantity
- 6784pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | FQA6N80_F109 |
| Description | MOSFET N-CH 800V 6.3A TO-3P |
| Manufacturer | ON Semiconductor |
| Series | QFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.95 Ohm @ 3.15A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 185W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 |
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