Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / FZ1600R17HP4B21BOSA2

Product Introduction

FZ1600R17HP4B21BOSA2

Part Number
FZ1600R17HP4B21BOSA2
Manufacturer/Brand
Infineon Technologies
Description
MODULE IGBT IHMB130-1
Category
Transistors - IGBTs - Modules
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
34pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number FZ1600R17HP4B21BOSA2
Datasheet FZ1600R17HP4B21BOSA2 datasheet
Description MODULE IGBT IHMB130-1
Manufacturer Infineon Technologies
Series -
Part Status Active
IGBT Type Trench Field Stop
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 1600A
Power - Max 10500W
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 1600A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 130nF @ 25V
Input Standard
NTC Thermistor No
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module

Latest Products for Transistors - IGBTs - Modules

APTGT200SK120G

Microsemi Corporation

IGBT 1200V 280A 890W SP6

APTGT200SK60T3AG

Microsemi Corporation

MOD IGBT 600V 290A SP3

APTGT20H60T1G

Microsemi Corporation

IGBT MOD TRENCH FULL BRIDGE SP1

APTGT20TL601G

Microsemi Corporation

MOD IGBT 600V 32A SP1

APTGT225A170G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG SP6

APTGT225DA170G

Microsemi Corporation

IGBT 1700V 340A 1250W SP6