Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IRFP4229PBF
Part Number | IRFP4229PBF |
Datasheet | IRFP4229PBF datasheet |
Description | MOSFET N-CH 250V 44A TO-247AC |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 46 mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4560pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |