
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SPD04N50C3ATMA1

| Part Number | SPD04N50C3ATMA1 |
| Datasheet | SPD04N50C3ATMA1 datasheet |
| Description | MOSFET N-CH 500V 4.5A DPAK |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3-1 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |