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| Part Number | FQT7N10TF |
| Datasheet | FQT7N10TF datasheet |
| Description | MOSFET N-CH 100V 1.7A SOT-223 |
| Manufacturer | ON Semiconductor |
| Series | QFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 850mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-4 |
| Package / Case | TO-261-4, TO-261AA |