Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI1036X-T1-GE3
Part Number | SI1036X-T1-GE3 |
Datasheet | SI1036X-T1-GE3 datasheet |
Description | MOSFET 2 N-CH 30V 610MA SC89-6 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 610mA (Ta) |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 15V |
Power - Max | 220mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SC-89-6 |