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Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FQP7N80C
Part Number | FQP7N80C |
Datasheet | FQP7N80C datasheet |
Description | MOSFET N-CH 800V 6.6A TO-220 |
Manufacturer | ON Semiconductor |
Series | QFET® |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.9 Ohm @ 3.3A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 167W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |