Product Introduction
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Product Specifications
Part Number |
IRLD110 |
Datasheet |
IRLD110 datasheet |
Description |
MOSFET N-CH 100V 1A 4-DIP |
Manufacturer |
Vishay Siliconix |
Series |
- |
Part Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100V |
Current - Continuous Drain (Id) @ 25°C |
1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 5V |
Rds On (Max) @ Id, Vgs |
540 mOhm @ 600mA, 5V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
6.1nC @ 5V |
Vgs (Max) |
±10V |
Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 25V |
FET Feature |
- |
Power Dissipation (Max) |
1.3W (Ta) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
Package / Case |
4-DIP (0.300", 7.62mm) |
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