Product Introduction
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See Product Specifications
Product Specifications
| Part Number |
IRLD110 |
| Datasheet |
IRLD110 datasheet |
| Description |
MOSFET N-CH 100V 1A 4-DIP |
| Manufacturer |
Vishay Siliconix |
| Series |
- |
| Part Status |
Obsolete |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) |
4V, 5V |
| Rds On (Max) @ Id, Vgs |
540 mOhm @ 600mA, 5V |
| Vgs(th) (Max) @ Id |
2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
6.1nC @ 5V |
| Vgs (Max) |
±10V |
| Input Capacitance (Ciss) (Max) @ Vds |
250pF @ 25V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.3W (Ta) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
4-DIP, Hexdip, HVMDIP |
| Package / Case |
4-DIP (0.300", 7.62mm) |
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