Product Introduction
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See Product Specifications
Product Specifications
Part Number |
BSO615N |
Datasheet |
BSO615N datasheet |
Description |
MOSFET 2N-CH 60V 2.6A 8SOIC |
Manufacturer |
Infineon Technologies |
Series |
SIPMOS® |
Part Status |
Obsolete |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
2.6A |
Rds On (Max) @ Id, Vgs |
150 mOhm @ 2.6A, 4.5V |
Vgs(th) (Max) @ Id |
2V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs |
20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
PG-DSO-8 |
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