Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK39N60X,S1F
Part Number | TK39N60X,S1F |
Datasheet | TK39N60X,S1F datasheet |
Description | MOSFET N-CH 600V 38.8A TO-247 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV-H |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 270W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |