Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / FDMD8900
Part Number | FDMD8900 |
Datasheet | FDMD8900 datasheet |
Description | MOSFET 2N-CH 30V POWER |
Manufacturer | ON Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 19A, 17A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 19A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2605pF @ 15V |
Power - Max | 2.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 12-PowerWDFN |
Supplier Device Package | 12-Power3.3x5 |