Product Introduction
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See Product Specifications
Product Specifications
Part Number |
IRF9953 |
Datasheet |
IRF9953 datasheet |
Description |
MOSFET 2P-CH 30V 2.3A 8-SOIC |
Manufacturer |
Infineon Technologies |
Series |
HEXFET® |
Part Status |
Obsolete |
FET Type |
2 P-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
2.3A |
Rds On (Max) @ Id, Vgs |
250 mOhm @ 1A, 10V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
190pF @ 15V |
Power - Max |
2W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
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