
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / SMMUN2116LT3G

| Part Number | SMMUN2116LT3G | 
| Datasheet | SMMUN2116LT3G datasheet | 
| Description | TRANS PREBIAS PNP 0.246W SOT-23 | 
| Manufacturer | ON Semiconductor | 
| Series | - | 
| Part Status | Active | 
| Transistor Type | PNP - Pre-Biased | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 4.7 kOhms | 
| Resistor - Emitter Base (R2) | - | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V | 
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | 
| Current - Collector Cutoff (Max) | 500nA | 
| Frequency - Transition | - | 
| Power - Max | 246mW | 
| Mounting Type | Surface Mount | 
| Package / Case | TO-236-3, SC-59, SOT-23-3 | 
| Supplier Device Package | SOT-23-3 (TO-236) |