
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / MUN2235T1G

| Part Number | MUN2235T1G | 
| Datasheet | MUN2235T1G datasheet | 
| Description | TRANS PREBIAS NPN 338MW SC59 | 
| Manufacturer | ON Semiconductor | 
| Series | - | 
| Part Status | Active | 
| Transistor Type | NPN - Pre-Biased | 
| Current - Collector (Ic) (Max) | 100mA | 
| Voltage - Collector Emitter Breakdown (Max) | 50V | 
| Resistor - Base (R1) | 2.2 kOhms | 
| Resistor - Emitter Base (R2) | 47 kOhms | 
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V | 
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA | 
| Current - Collector Cutoff (Max) | 500nA | 
| Frequency - Transition | - | 
| Power - Max | 230mW | 
| Mounting Type | Surface Mount | 
| Package / Case | SC-74, SOT-457 | 
| Supplier Device Package | SC-59-3 |