Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTA1N170DHV
Part Number | IXTA1N170DHV |
Datasheet | IXTA1N170DHV datasheet |
Description | MOSFET N-CH 1700V 1A TO-263 |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1700V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 16 Ohm @ 500mA, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3090pF @ 25V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 290W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |