
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / IMH23T110

| Part Number | IMH23T110 |
| Datasheet | IMH23T110 datasheet |
| Description | TRANS PREBIAS DUAL NPN SMT6 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 600mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| Frequency - Transition | 150MHz |
| Power - Max | 300mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SMT6 |