Product Introduction
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Product Specifications
Part Number |
NSBC123EPDXV6T1G |
Datasheet |
NSBC123EPDXV6T1G datasheet |
Description |
TRANS PREBIAS NPN/PNP SOT563 |
Manufacturer |
ON Semiconductor |
Series |
- |
Part Status |
Obsolete |
Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) |
2.2 kOhms |
Resistor - Emitter Base (R2) |
2.2 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
8 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 5mA, 10mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
- |
Power - Max |
500mW |
Mounting Type |
Surface Mount |
Package / Case |
SOT-563, SOT-666 |
Supplier Device Package |
SOT-563 |
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