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Product Introduction

RN1706JE(TE85L,F)

Part Number
RN1706JE(TE85L,F)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS 2NPN PREBIAS 0.1W ESV
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
134pcs Stock Available.

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Product Specifications

Part Number RN1706JE(TE85L,F)
Description TRANS 2NPN PREBIAS 0.1W ESV
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Discontinued at Digi-Key
Transistor Type 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-553
Supplier Device Package ESV

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