Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT25GP120BDQ1G
Part Number | APT25GP120BDQ1G |
Datasheet | APT25GP120BDQ1G datasheet |
Description | IGBT 1200V 69A 417W TO247 |
Manufacturer | Microsemi Corporation |
Series | POWER MOS 7® |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 69A |
Current - Collector Pulsed (Icm) | 90A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 25A |
Power - Max | 417W |
Switching Energy | 500µJ (on), 440µJ (off) |
Input Type | Standard |
Gate Charge | 110nC |
Td (on/off) @ 25°C | 12ns/70ns |
Test Condition | 600V, 25A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247 [B] |