Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / BSO612CVGHUMA1
Part Number | BSO612CVGHUMA1 |
Datasheet | BSO612CVGHUMA1 datasheet |
Description | MOSFET N/P-CH 60V 2A 8-SOIC |
Manufacturer | Infineon Technologies |
Series | SIPMOS® |
Part Status | Active |
FET Type | N and P-Channel |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 3A, 2A |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 20µA |
Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
Power - Max | 2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | PG-DSO-8 |