Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / PMDPB30XN,115
Part Number | PMDPB30XN,115 |
Datasheet | PMDPB30XN,115 datasheet |
Description | MOSFET 2N-CH 20V 4A 6HUSON |
Manufacturer | Nexperia USA Inc. |
Series | - |
Part Status | Active |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
Power - Max | 490mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | 6-HUSON-EP (2x2) |