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| Part Number | VT6M1T2CR |
| Datasheet | VT6M1T2CR datasheet |
| Description | MOSFET N/P-CH 20V 0.1A VMT6 |
| Manufacturer | Rohm Semiconductor |
| Series | - |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Power - Max | 120mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | VMT6 |