Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPI020N06NAKSA1
Part Number | IPI020N06NAKSA1 |
Datasheet | IPI020N06NAKSA1 datasheet |
Description | MOSFET N-CH 60V 29A TO262-3 |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 29A (Ta), 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2 mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 143µA |
Gate Charge (Qg) (Max) @ Vgs | 106nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7800pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 3W (Ta), 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |