Product Introduction
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See Product Specifications
Product Specifications
| Part Number |
EPC2107 |
| Datasheet |
EPC2107 datasheet |
| Description |
GANFET 3 N-CH 100V 9BGA |
| Manufacturer |
EPC |
| Series |
eGaN® |
| Part Status |
Active |
| FET Type |
3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| FET Feature |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
100V |
| Current - Continuous Drain (Id) @ 25°C |
1.7A, 500mA |
| Rds On (Max) @ Id, Vgs |
320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V |
| Vgs(th) (Max) @ Id |
2.5V @ 100µA, 2.5V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs |
0.16nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds |
16pF @ 50V, 7pF @ 50V |
| Power - Max |
- |
| Operating Temperature |
-40°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
9-VFBGA |
| Supplier Device Package |
9-BGA (1.35x1.35) |
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