Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI2308DS-T1-E3
Part Number | SI2308DS-T1-E3 |
Datasheet | SI2308DS-T1-E3 datasheet |
Description | MOSFET N-CH 60V 2A SOT23-3 |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 160 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |