Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / RW1A020ZPT2R
Part Number | RW1A020ZPT2R |
Datasheet | RW1A020ZPT2R datasheet |
Description | MOSFET P-CH 12V 2A WEMT6 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Not For New Designs |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs | 105 mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 4.5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 6V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WEMT |
Package / Case | SOT-563, SOT-666 |