Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPA65R095C7XKSA1
Part Number | IPA65R095C7XKSA1 |
Datasheet | IPA65R095C7XKSA1 datasheet |
Description | MOSFET N-CH 650V TO220-3 |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ C7 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 11.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2140pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 34W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |