Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / RJH65D27BDPQ-A0#T2
Part Number | RJH65D27BDPQ-A0#T2 |
Datasheet | RJH65D27BDPQ-A0#T2 datasheet |
Description | IGBT TRENCH 650V 100A TO247A |
Manufacturer | Renesas Electronics America |
Series | - |
Part Status | Active |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | - |
Vce(on) (Max) @ Vge, Ic | 1.65V @ 15V, 50A |
Power - Max | 375W |
Switching Energy | 1mJ (on), 1.5mJ (off) |
Input Type | Standard |
Gate Charge | 175nC |
Td (on/off) @ 25°C | 20ns/165ns |
Test Condition | 400V, 50A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | 80ns |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | TO-247A |