Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / NGTD21T65F2WP

Product Introduction

NGTD21T65F2WP

Part Number
NGTD21T65F2WP
Manufacturer/Brand
ON Semiconductor
Description
IGBT TRENCH FIELD STOP 650V DIE
Category
Transistors - IGBTs - Single
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
290pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number NGTD21T65F2WP
Datasheet NGTD21T65F2WP datasheet
Description IGBT TRENCH FIELD STOP 650V DIE
Manufacturer ON Semiconductor
Series -
Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) 200A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 45A
Power - Max -
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Latest Products for Transistors - IGBTs - Single

IKW50N65WR5XKSA1

Infineon Technologies

IGBT TRENCH 650V 80A TO247-3

IHW25N120E1XKSA1

Infineon Technologies

IGBT NPT/TRENCH 1200V 50A TO247

IGW50N65H5FKSA1

Infineon Technologies

IGBT 650V 80A 305W PG-TO247-3

IKW30N65WR5XKSA1

Infineon Technologies

IGBT TRENCH 650V 60A TO247-3

IHW40N65R5XKSA1

Infineon Technologies

IGBT 650V 80A 230W TO247

IGW40N65H5FKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3