Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IXTH48N20
Part Number | IXTH48N20 |
Datasheet | IXTH48N20 datasheet |
Description | MOSFET N-CH 200V 48A TO-247 |
Manufacturer | IXYS |
Series | - |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 50 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 275W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |