
Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SI6467BDQ-T1-GE3

| Part Number | SI6467BDQ-T1-GE3 | 
| Description | MOSFET P-CH 12V 6.8A 8TSSOP | 
| Manufacturer | Vishay Siliconix | 
| Series | TrenchFET® | 
| Part Status | Obsolete | 
| FET Type | P-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 12V | 
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta) | 
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | 
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 8A, 4.5V | 
| Vgs(th) (Max) @ Id | 850mV @ 450µA | 
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 4.5V | 
| Vgs (Max) | ±8V | 
| Input Capacitance (Ciss) (Max) @ Vds | - | 
| FET Feature | - | 
| Power Dissipation (Max) | 1.05W (Ta) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | 8-TSSOP | 
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) |