Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI1025X-T1-E3
Part Number | SI1025X-T1-E3 |
Datasheet | SI1025X-T1-E3 datasheet |
Description | MOSFET 2P-CH 60V 0.19A SOT563F |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 190mA |
Rds On (Max) @ Id, Vgs | 4 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 23pF @ 25V |
Power - Max | 250mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SC-89-6 |