Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1902,LF(CT
Product Introduction
RN1902,LF(CT
- Part Number
- RN1902,LF(CT
- Manufacturer/Brand
- Toshiba Semiconductor and Storage
- Description
- TRANS 2NPN PREBIAS 0.2W US6
- RoHs Status
- Lead free / RoHS Compliant
- Series
- -
- Quantity
- 12pcs Stock Available.
Images are for reference only
See Product Specifications
See Product Specifications
Product Specifications
| Part Number | RN1902,LF(CT |
| Description | TRANS 2NPN PREBIAS 0.2W US6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
Latest Products for Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Related Products
- XP0121E00L
- XP0121L00L
- XP0121M00L
- XP0121N00L
- XP0221100L
- XP0331100L
- XP0338300L
- XP0339000L
- EMD5DXV6T1
- EMD5DXV6T1G
- EMF5XV6T5
- NSBA113EDXV6T1
- NSBA114EDXV6T5
- NSBA114EDXV6T5G
- NSBA114TDXV6T1
- NSBA114TDXV6T5
- NSBA114YDXV6T1
- NSBA123EDXV6T1
- NSBA123JDXV6T1
- NSBA123JDXV6T1G
- NSBA124EDXV6T1
- NSBA124EDXV6T5G
- NSBA124XDXV6T1
- NSBA143EDXV6T1
- NSBA143TDXV6T1
- NSBA143ZDXV6T1
- NSBA143ZDXV6T5G
- NSBA144EDXV6T5
- NSBC113EDXV6T1
- NSBC113EDXV6T1G
- NSBC113EDXV6T5
- NSBC113EPDXV6T1
- NSBC114EDXV6T1
- NSBC114EPDXV6T1
- NSBC114TDXV6T1
- NSBC114TDXV6T5
- NSBC114TPDXV6T1
- NSBC114YDXV6T1
- NSBC114YPDXV6T1
- NSBC123EDXV6T1