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Part Number | US6J11TR |
Datasheet | US6J11TR datasheet |
Description | MOSFET 2P-CH 12V 1.3A TUMT6 |
Manufacturer | Rohm Semiconductor |
Series | - |
Part Status | Active |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 1.3A |
Rds On (Max) @ Id, Vgs | 260 mOhm @ 1.3A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 2.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 6V |
Power - Max | 320mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-SMD, Flat Leads |
Supplier Device Package | TUMT6 |