Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays / SI9926BDY-T1-E3
Part Number | SI9926BDY-T1-E3 |
Datasheet | SI9926BDY-T1-E3 datasheet |
Description | MOSFET 2N-CH 20V 6.2A 8-SOIC |
Manufacturer | Vishay Siliconix |
Series | TrenchFET® |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6.2A |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 8.2A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.14W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 8-SO |