Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMG4N60SK3-13
Part Number | DMG4N60SK3-13 |
Datasheet | DMG4N60SK3-13 datasheet |
Description | MOSFET BVDSS 501V 650V TO252 T |
Manufacturer | Diodes Incorporated |
Series | - |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 2.3 Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 14.3nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 532pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 48W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-252 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |