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Part Number | TPC8212-H(TE12LQ,M |
Datasheet | TPC8212-H(TE12LQ,M datasheet |
Description | MOSFET 2N-CH 30V 6A SOP8 |
Manufacturer | Toshiba Semiconductor and Storage |
Series | - |
Part Status | Obsolete |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6A |
Rds On (Max) @ Id, Vgs | 21 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 10V |
Power - Max | 450mW |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Supplier Device Package | 8-SOP (5.5x6.0) |