
Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / BFN18H6327XTSA1

| Part Number | BFN18H6327XTSA1 |
| Datasheet | BFN18H6327XTSA1 datasheet |
| Description | TRANSISTOR AF SOT89-4 |
| Manufacturer | Infineon Technologies |
| Series | Automotive, AEC-Q101 |
| Part Status | Last Time Buy |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 300V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 2mA, 20mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
| Power - Max | 1.5W |
| Frequency - Transition | 70MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-243AA |
| Supplier Device Package | PG-SOT89 |