Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2305(TE85L,F)

Product Introduction

RN2305(TE85L,F)

Part Number
RN2305(TE85L,F)
Manufacturer/Brand
Toshiba Semiconductor and Storage
Description
TRANS PREBIAS PNP 0.1W USM
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
RoHs Status
Lead free / RoHS Compliant
Series
-
Quantity
268pcs Stock Available.

Quick Order

Company
Contact
Phone
Email
Country
Content
Images are for reference only
See Product Specifications

Product Specifications

Part Number RN2305(TE85L,F)
Description TRANS PREBIAS PNP 0.1W USM
Manufacturer Toshiba Semiconductor and Storage
Series -
Part Status Discontinued at Digi-Key
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 200MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package USM

Latest Products for Transistors - Bipolar (BJT) - Single, Pre-Biased

RN1103MFV(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

RN1101MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V SOT723

RN1103MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 150MW VESM

RN1105MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

RN1106MFV(TL3,T)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.15W VESM

RN1109MFV,L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 500NA VESM