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| Part Number | IPDD60R150G7XTMA1 |
| Datasheet | IPDD60R150G7XTMA1 datasheet |
| Description | MOSFET NCH 650V 45A PG-HDSOP-10 |
| Manufacturer | Infineon Technologies |
| Series | CoolMOS™ G7 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 5.3A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 260µA |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 902pF @ 400V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HDSOP-10-1 |
| Package / Case | 10-PowerSOP Module |