Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPS04N03LA G
Part Number | IPS04N03LA G |
Datasheet | IPS04N03LA G datasheet |
Description | MOSFET N-CH 25V 50A IPAK |
Manufacturer | Infineon Technologies |
Series | OptiMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 80µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 5V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5199pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 115W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO251-3 |
Package / Case | TO-251-3 Stub Leads, IPak |