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| Part Number | DMN1019UVT-13 |
| Datasheet | DMN1019UVT-13 datasheet |
| Description | MOSFET N-CH 12V 10.7A TSOT26 |
| Manufacturer | Diodes Incorporated |
| Series | - |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs | 10 mOhm @ 9.7A, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50.4nC @ 8V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2588pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.73W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSOT-26 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |