Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPA50R650CE
Part Number | IPA50R650CE |
Datasheet | IPA50R650CE datasheet |
Description | MOSFET N-CH 500V 6.1A TO220FP |
Manufacturer | Infineon Technologies |
Series | CoolMOS™ |
Part Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Rds On (Max) @ Id, Vgs | 650 mOhm @ 1.8A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 342pF @ 100V |
FET Feature | Super Junction |
Power Dissipation (Max) | 27.2W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-FP |
Package / Case | TO-220-3 Full Pack |