Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TK10A80E,S4X
Part Number | TK10A80E,S4X |
Datasheet | TK10A80E,S4X datasheet |
Description | MOSFET N-CH 800V TO220SIS |
Manufacturer | Toshiba Semiconductor and Storage |
Series | π-MOSVIII |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |