Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SIHU4N80E-GE3
Product Introduction
SIHU4N80E-GE3
- Part Number
- SIHU4N80E-GE3
- Manufacturer/Brand
- Vishay Siliconix
- Description
- MOSFET N-CHAN 800V TO-251
- Category
- Transistors - FETs, MOSFETs - Single
- RoHs Status
- Lead free / RoHS Compliant
- Series
- E
- Quantity
- 3171pcs Stock Available.
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See Product Specifications
See Product Specifications
Product Specifications
| Part Number | SIHU4N80E-GE3 |
| Datasheet | SIHU4N80E-GE3 datasheet |
| Description | MOSFET N-CHAN 800V TO-251 |
| Manufacturer | Vishay Siliconix |
| Series | E |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.27 Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 622pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | IPAK (TO-251) |
| Package / Case | TO-251-3 Long Leads, IPak, TO-251AB |
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