Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / DMG3N60SJ3
Part Number | DMG3N60SJ3 |
Datasheet | DMG3N60SJ3 datasheet |
Description | MOSFET BVDSS 501V 650V TO251 |
Manufacturer | Diodes Incorporated |
Series | Automotive, AEC-Q101 |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.5 Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12.6nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 354pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 41W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251 |
Package / Case | TO-251-3, IPak, Short Leads |